View TEA1610T_4554496.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 -- 26 March 2007 Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier. To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers. The circuit is very flexible and enables a broad range of applications for different mains voltages.
VHS VDD bridge voltage supply (high side) MOSFET SWITCH
TEA1610
HALFBRIDGE CIRCUIT
RESONANT CONVERTER
mgu336
signal ground power ground
Fig 1. Basic configuration
2. Features
I Integrated high voltage level-shift I Transconductance error amplifier for function ultra high-ohmic regulation feedback I Integrated high voltage bootstrap diode I Latched shut-down circuit for overcurrent and overvoltage protection I Low start-up current (green function) I Adjustable minimum and maximum frequencies I Adjustable dead time I Undervoltage lockout
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
3. Applications
I TV and monitor power supplies I High voltage power supplies
4. Quick reference data
Table 1. Symbol VHS IGH(source) Quick reference data Parameter high side driver voltage high side output source current low side output source current high side output sink current VDD(F) = 13 V; VSH = 0 V; VGH = 0 V VGL = 0 V VDD(F) = 13 V; VSH = 0 V; VGH = 13 V
[1]
Conditions
Min 0 -135
Typ -180
Max 600 -225
Unit V mA
IGL(source) IGH(sink)
-135 -
-180 300
-225 -
mA mA
IGL(sink) fbridge(max)
low side output sink current VGL = 14 V maximum bridge frequency CF = 100 pF; IIFS = 1 mA; IIRS = 200 A; f OSC fbridge = -----------2
450
300 500
550
mA kHz
VI(CM)
[1] [2]
common mode input voltage
[2]
-
-
2.5
V
The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF, and the charge/discharge currents ICF(ch) and ICF(dis). This parameter applies specifically to the error amplifier.
5. Ordering information
Table 2. Ordering information Package Name TEA1610P TEA1610T DIP16 SO16 Description plastic dual in-line package; 16 leads (300 mil); long body plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height Version SOT38-1 SOT109-2 Type number
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
2 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
6. Block diagram
VDD 11 8 BOOTSTRAP SUPPLY LEVEL SHIFTER HIGH SIDE DRIVER 7 6 GH SH VDD(F)
TEA1610
reset LOW SIDE DRIVER start/stop oscillation shut-down 9 start-up LOGIC
10 4 15
GL PGND
SD
SGND
2.33 V
/2
2 1 gm ERROR AMPLIFIER
2.5 V 3V 0.6 V
I+ I-
x2
Icharge OSCILLATOR Idischarge
5 n.c.
3 VCO
14 IRS
16 VREF
12 IFS
13 CF
mgu337
Fig 2. Block diagram
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
3 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
7. Pinning information
7.1 Pinning
I- I+ VCO PGND n.c. SH GH VDD(F)
1 2 3 4
16 VREF 15 SD 14 IRS 13 CF
I- I+ VCO PGND n.c. SH GH VDD(F)
1 2 3 4
16 VREF 15 SD 14 IRS 13 CF
TEA1610P
5 6 7 8
001aaf866
12 IFS 11 VDD 10 GL 9 SGND
TEA1610T
5 6 7 8
001aaf867
12 IFS 11 VDD 10 GL 9 SGND
Fig 3. Pin configuration for TEA1610P
Fig 4. Pin configuration for TEA1610T
7.2 Pin description
Table 3. Symbol II+ VCO PGND n.c. SH GH VDD(F) SGND GL VDD IFS CF IRS SD VREF Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Description error amplifier inverting input error amplifier non-inverting input error amplifier output power ground not connected (high voltage spacer) high side switch source gate of the high side switch floating supply voltage for the high side driver signal ground gate of the low side switch supply voltage oscillator discharge current input oscillator capacitor oscillator charge current input shut-down input reference voltage
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
4 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
8. Functional description
8.1 Start-up
When the applied voltage at VDD reaches VDD(initial) (see Figure 5), the low side power switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the bootstrap capacitor (Cboot) used for the floating supply of the high side driver. During start-up, the voltage on the frequency capacitor (Cf) is zero and defines the start-up state. The output voltage of the error amplifier is kept constant (typ. 2.5 V) and switching starts at about 80 % of the maximum frequency at the moment pin VDD reaches the start level. The start-up state is maintained until VDD reaches the start level (13.5 V), the oscillator is activated and the converter starts operating.
VDD 0
VDD(start) VDD(initial)
GH-SH 0
GL 0 t
mgt998
Fig 5. Start-up
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
5 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
8.2 Oscillator
The internal oscillator is a current-controlled oscillator that generates a sawtooth output. The frequency of the sawtooth is determined by the external capacitor Cf and the currents flowing into the IFS and IRS pins. The minimum frequency and the dead time are set by the capacitor Cf and resistors Rf(min) and Rdt. The maximum frequency is set by resistor Rf (see Figure 10). The oscillator frequency is exactly twice the bridge frequency to achieve an accurate 50 % duty factor. An overview of the oscillator and driver signals is given in Figure 6.
CF
GH-SH 0
GL 0 dead time (high to low) dead time (low to high) t
mgt999
Fig 6. Oscillator and driver signals
8.3 Dead time resistor
The dead time resistor Rdt is connected between the 3 V reference pin (VREF) and the IFS current input pin (see Figure 10). The voltage on the IFS pin is kept constant at a temperature independent value of 0.6 V. The current that flows into the IFS pin is determined by the value of resistor Rdt and the 2.4 V voltage drop across this resistor. The IFS input current equals the discharge current of capacitor Cf and determines the falling slope of the oscillator. The falling slope time is used to create a dead time (tdt) between two successive switching actions of the half-bridge switches: 2.4V I IFS = ----------R dt C f x V Cf t dt = -------------------------I IFS t IFS = t dt
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
6 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
8.4 Minimum frequency resistor
The Rf(min) resistor is connected between the VREF pin (3 V reference voltage) and the IRS current input (held at a temperature independent voltage level of 0.6 V). The charge current of the capacitor Cf is twice the current flowing into the IRS pin. The Rf(min) resistor has a voltage drop of 2.4 V and its resistance defines the minimum charge current (rising slope) of the Cf capacitor if the control current is zero. The minimum frequency is defined by this minimum charge current (IIRS1) and the discharge current: 2.4V I IRS1 = ----------------R f ( min ) C f x V Cf t IRS1 = -------------------------2 x I IRS1 1 f osc ( min ) = ----------------------t dt + t IRS1 f osc ( min f bridge ( min ) = --------------------) 2
8.5 Maximum frequency resistor
The output voltage is regulated by changing the frequency of the half-bridge converter. The maximum frequency is determined by the Rf resistor which is connected between the error amplifier output VCO and the oscillator current input pin IRS. The current that flows through the Rf resistor (IIRS2) is added to the current flowing through the Rf(min) resistor. As a result, the charge current ICF increases and the oscillation frequency increases. As the falling slope of the oscillator is constant, the relationship between the output frequency and the charge current is not a linear function (see Figure 7 and Figure 9): V VCO - 0.6 I IRS2 = -------------------------R f C f x V Cf t IRS2 = -------------------------------------------2 x ( I IRS1 + I IRS2 ) The maximum output voltage of the error amplifier and the value of Rf determine the maximum frequency: V VCO ( max ) - 0.6 I IRS2 ( max ) = -------------------------------------R f C f x V Cf t IRS ( min ) = -------------------------------------------------------2 x ( I IRS2 + I IRS2 ( max ) ) 1 f osc ( max ) = -----------T OSC
TEA1610T_P_3 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
7 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
f osc ( max f bridge ( max ) = ---------------------) 2 T OSC = t IRS ( min ) + t IFS Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies both the dead time and the oscillator frequency show a decay. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCf and the charge and discharge currents. However, at higher frequencies the accuracy decreases due to delays in the circuit.
fosc fosc(max) fosc(start)
fosc(min)
0
IIRS
mgw001
Fig 7. Frequency range
8.6 Error amplifier
The error amplifier is a transconductance amplifier. Thus the output current at pin VCO is determined by the amplifier transconductance and the differential voltage on input pins I+ and I-. The output current IVCO is fed to the IRS input of the current-controlled oscillator. The source capability of the error amplifier increases current in the IRS pin when the differential input voltage is positive. Therefore the minimum current is determined by resistor Rf(min) and the minimum frequency setting is independent of the characteristics of the error amplifier. The error amplifier has a maximum output current of 0.5 mA for an output voltage up to 2.5 V. If the source current decreases, the oscillator frequency also decreases resulting in a higher regulated output voltage. During start-up, the output voltage of the amplifier is held at a constant value of 2.5 V. This voltage level defines, together with resistor Rf, the initial switching frequency of the TEA1610 after start-up.
8.7 Shut-down
The shut-down input (SD) has an accurate threshold level of 2.33 V. When the voltage on input SD reaches 2.33 V, both power switches immediately switch off and the TEA1610 enters shut-down mode.
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
8 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
During shut-down mode, pin VDD is clamped by an internal Zener diode at 12.0 V with 1 mA input current. This clamp prevents VDD rising above the rating of 14 V due to low supply current to the TEA1610 in shut-down mode. When the TEA1610 is in the shut-down mode, it can be activated again only by lowering VDD below the VDD(reset) level (typically 5.3 V). The shut-down latch is then reset and a new start-up cycle can commence (see Figure 8).
oscillation
shutdown
supply off
start-up
oscillation VDD(start)
VDD
VDD(sdc) VDD(reset)
SD
VSD(th)
GH-SH 0
GL 0
t
mgw002
Fig 8. Shut-down
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
9 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
9. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Voltages VHS VDD VI+ VIVSD Currents IIFS IIRS IREF Ptot Tamb Tstg Handling VESD electrostatic discharge voltage
[2] [3]
Parameter high side driver voltage supply voltage amplifier non-inverting input voltage amplifier inverting input voltage shut-down input voltage oscillator falling slope input current oscillator rising slope input current VREF source current total power dissipation ambient temperature storage temperature
Conditions
Min 0
[1]
Max 600 15 5 5 5 1 1 -2 0.8 +70 +150 2000 200
Unit V V V V V mA mA mA W C C V V
0 0 0 0 -
Power and temperature Tamb < 70 C operating -25 -25 -
[1] [2] [3]
It is recommended that a 100 nF capacitor be placed as close as possible to the VDD pin (as indicated in Figure 10, and in the application note). Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 H coil and 10 resistor.
10. Thermal characteristics
Table 5. Symbol Rth(j-a) Rth(j-pin) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to pin Conditions in free air Typ 100 50 Unit K/W K/W
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
10 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
11. Characteristics
Table 6. Characteristics All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V and Tamb = 25 C; tested using the circuit shown in Figure 10, unless otherwise specified. Symbol IL VDD(initial) VDD(start) VDD(stop) VDD(hys) VDD(sdc) VDD(reset) IDD Parameter leakage current supply voltage for defined driver output start oscillator voltage stop oscillator voltage start-stop hysteresis voltage shut-down clamp voltage reset voltage supply current: low side on; high side off Cf = 100 pF; IIFS = 0.5 mA; IIRS = 50 A; Co = 200 pF low side off; high side off; VDD = 9 V
[1]
Conditions VDD(F), VGH and VSH = 600 V low side on; high side off
Min 12.9 9.0 3.8
Typ 4 13.4 9.4 4.0 12.0 5.3
Max 30 5 13.9 9.8 4.2 13.0 6.0
Unit A V V V V V V
High voltage pins VDD(F), GH and SH Supply pin VDD
low side off; high side off; IDD = 1 mA
11.0 4.5
start-up operating shut-down Reference voltage on pin VREF VREF IREF Zo(VREF) V REF ----------------T reference voltage current capability output impedance temperature coefficient IREF = 0 mA source only IREF = -1 mA IREF = 0 mA; Tj = 25 to 150 C
130 2.9 -1.0 -
180 2.4 130 3.0 5.0 -0.3
220 180 3.1 -
A mA A V mA mV/K
Current controlled oscillator pins IRS, IFS, CF ICF(ch)(min) ICF(ch)(max) VIRS ICF(dis)(min) ICF(dis)(max) VIFS fbridge(min) minimum CF charge current maximum CF charge current voltage on pin IRS minimum CF discharge current maximum CF discharge current voltage on pin IFS minimum bridge frequency (for stable operation) IIRS = 15 A; VCF = 2 V IIRS = 200 A; VCF = 2 V IIRS = 200 A IIRS = 50 A; VCF = 2 V IIFS = 1 mA; VCF = 2 V IIFS = 1 mA CF = 100 pF; IIFS = 0.5 mA; f OSC IIRS = 50 A; fbridge = -----------2
(c) NXP B.V. 2007. All rights reserved.
28 340 570 47 0.93 570 188
30 380 600 50 0.98 600 200
32 420 630 53 1.03 630 212
A A mV A mA mV kHz
TEA1610T_P_3
Product data sheet
Rev. 03 -- 26 March 2007
11 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Table 6. Characteristics ...continued All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V and Tamb = 25 C; tested using the circuit shown in Figure 10, unless otherwise specified. Symbol fbridge(max) Parameter maximum bridge frequency Conditions CF = 100 pF; IIFS = 1 mA; f OSC IIRS = 200 A; fbridge = -----------2 DC level DC level 1.63 Cf = 100 pF; IIFS = 0.5 mA; IIRS = 50 A VDD(F) = 13 V; VSH = 0 V; VGH = 0 V VDD(F) = 13 V; VSH = 0 V; VGH = 13 V VGL = 0 V VGL = 14 V VDD(F) = 13 V; VSH = 0 V; IGH = 10 mA VDD(F) = 13 V; VSH = 0 V; IGH = 10 mA IGL = 10 mA IGL = 10 mA I = 5 mA 0.37 1.27 3.0 1.73 0.40 1.83 0.43 V V V s
[2]
Min 450
Typ 500
Max 550
Unit kHz
VCF(L) VCF(H) VCf(p-p) tdt
CF trip level LOW CF trip level HIGH Cf voltage (peak-to-peak value) dead time
Output drivers IGH(source) IGH(sink) IGL(source) IGL(sink) VGH(H) VGH(L) VGL(H) VGL(L) Vd(boot) high side output source current high side output sink current low side output source current low side output sink current high side output voltage HIGH high side output voltage LOW low side output voltage HIGH low side output voltage LOW bootstrap diode voltage drop input current threshold level common mode input current common mode input voltage input offset voltage transconductance open loop gain gain bandwidth product VI(CM) = 1 V; IVCO = -10 mA VI(CM) = 1 V; source only VI(CM) = 1 V VI(CM) = 1 V
[3] [3]
-135 -135 10.8 10.8 1.5
-180 300 -180 300 12 0.2 12 0.2 1.8
-225 -225 0.5 0.5 2.1
mA mA mA mA V V V V V
Shut-down input pin SD ISD VSD(th) II(CM) VI(CM) VI(offset) gm Ao GB VSD = 2.33 V 0 2.26 VI(CM) = 1 V -2 0.2 2.33 -0.1 0 330 70 5 0.5 2.40 -0.5 2.5 +2 A V A V mV A/mV dB MHz
Error amplifier pins I+, I-, VCO
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
12 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Table 6. Characteristics ...continued All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V and Tamb = 25 C; tested using the circuit shown in Figure 10, unless otherwise specified. Symbol VVCO(max) IVCO(max) VVCO(start)
[1]
Parameter maximum VCO voltage maximum output current start VCO voltage
Conditions operating operating; VVCO = 1 V IVCO = 0.3 mA
[3]
Min 3.2 -0.4 2.3
Typ 3.6 -0.5 2.5
Max 4.0 -0.6 2.7
Unit V mA V
I DD = 2 x Q g ( tot ) x f bridge = 2 x 55nC x 150kHz = 16.5mA
[2] [3]
The supply current IDD increases with increasing bridge frequency to drive the capacitive load of two MOSFETs. Typical MOSFETs for the TEA1610 application are 8N50 (NXP type PHX80N50E, Qg(tot) = 55 nC typ.) and these will increase the supply current at 150 kHz according to the following formula:
The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF, and the charge/discharge currents ICF(ch) and ICF(dis). This parameter is tested with a resistor of 10 k connected from pin VCO to GND.
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
13 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
12. Application information
An application example of a zero-voltage switching resonant converter application using TEA1610 is shown in Figure 10. In the off-mode the VDD voltage is pulled below the stop level of 9.4 V by the 7.5 V Zener diode and the half-bridge is not driven. In the on-mode the TEA1610 starts-up with a high-ohmic bleeder resistor. After passing the level for start of oscillation, the TEA1610 is in normal operating mode and consumes the normal supply current delivered by the 12 V supply. The dead time is set by Rdt and Cf. The minimum frequency is adjusted by Rf(min) and the frequency range is set by Rf. The output voltage is adjusted with a potentiometer connected to the inverting input of the error amplifier and is regulated via a feedback circuit. The shut-down input is used for overvoltage protection. To prevent interference, filter capacitors can be added on pins IFS, IRS and VREF. The maximum value of each filter capacitor is 100 pF. Practical values of the application example are given in Figure 9, in which the measured oscillator frequency with capacitor Cf = 220 pF is shown as a function of the charge current IIRS. Note that the slope of the measured frequency differs from the theoretical frequency (frequency set) calculated as described in Section 8.5 "Maximum frequency resistor". The measured dead time is directly related to the charge current (total current flowing into pin IRS) and therefore to the oscillator frequency. The measured frequency graph can be used to determine the required Rf resistor for a certain maximum frequency in an application with the same value of capacitor Cf. More application information can be found in application note AN99011.
800 fosc (kHz) 600 dead time (low to high) dead time (high to low)
mgw003
1200 tdt (ns) 900
400 frequency set frequency measured 200
600
300
0 0 40 80 120 160 IIRS (A)
0 200
(1) fOSC at IIFS = 500 mA. (2) fOSC = 2 x fbridge.
Fig 9. Oscillator frequency and measured dead time as functions of charge current IIRS
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
14 of 21
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
Product data sheet Rev. 03 -- 26 March 2007
(c) NXP B.V. 2007. All rights reserved. TEA1610T_P_3
NXP Semiconductors
bridge voltage supply (high side)
12 V
RVDD
output voltage
CVDD
7.5 V VDD 11 on/off
8 VDD(F) bootstrap diode LEVEL SHIFTER HIGH SIDE DRIVER 7 GH
Lp Lr(ext)
TEA1610
6 SH
Cboot
LOW SIDE DRIVER SUPPLY signal ground LOGIC
10 GL
Cp
Cr
4 PGND
Zero-voltage-switching resonant converter controller
15 SD SGND 9 2.33 V regulator feedback /2 I+ 2 I- 1 gm OSCILLATOR ERROR AMPLIFIER 3 VCO
Rf
power ground overvoltage protection
TEA1610P; TEA1610T
SGND
mgu339
3V 0.6 V 14 IRS 16 VREF
Rdt
12 IFS
13 CF
Cf
Rf(min)
CSS
Fig 10. Application diagram
15 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
13. Test information
13.1 Quality information
The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
16 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
14. Package outline
DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 16 9 MH wM (e 1)
pin 1 index E
1
8
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.7 0.19 A1 min. 0.51 0.02 A2 max. 3.7 0.15 b 1.40 1.14 0.055 0.045 b1 0.53 0.38 0.021 0.015 c 0.32 0.23 0.013 0.009 D (1) 21.8 21.4 0.86 0.84 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.1 e1 7.62 0.3 L 3.9 3.4 0.15 0.13 ME 8.25 7.80 0.32 0.31 MH 9.5 8.3 0.37 0.33 w 0.254 0.01 Z (1) max. 2.2 0.087
Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION SOT38-1 REFERENCES IEC 050G09 JEDEC MO-001 JEITA SC-503-16 EUROPEAN PROJECTION
ISSUE DATE 99-12-27 03-02-13
Fig 11. Package outline SOT38-1 (DIP16)
TEA1610T_P_3 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
17 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height
SOT109-2
D
E
A X
c y HE vMA
Z 16 9
Q A2 pin 1 index Lp 1 e bp 8 wM L detail X A1 (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.65 A1 0.20 0.05 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.05 HE 6.2 5.8 0.244 0.228 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 0.028 0.024 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.008 0.057 inches 0.065 0.002 0.049
0.019 0.0100 0.39 0.014 0.0075 0.38
0.039 0.041 0.016
0.028 0.004 0.012
8o o 0
Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE VERSION SOT109-2 REFERENCES IEC 076E07 JEDEC MS-012 JEITA EUROPEAN PROJECTION
ISSUE DATE 99-12-27 03-02-19
Fig 12. Package outline SOT109-2 (SO16)
TEA1610T_P_3 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
18 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
15. Revision history
Table 7. Revision history Release date 20070326 Data sheet status Product data sheet Product data sheet Change notice Supersedes TEA1610T_P_2 TEA1610T_P_1 Document ID TEA1610T_P_3 Modifications: TEA1610T_P_2 Modifications:
* * * *
In Table 4 "Limiting values", maximum value for VDD changed from 14 V to 15 V. The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Equations modified in Section 8.4 "Minimum frequency resistor" and Section 8.5 "Maximum frequency resistor". Product specification -
20070206
TEA1610T_P_1
20010425
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
19 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
16.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
TEA1610T_P_3
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 -- 26 March 2007
20 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
18. Contents
1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 9 10 11 12 13 13.1 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Start-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Dead time resistor. . . . . . . . . . . . . . . . . . . . . . . 6 Minimum frequency resistor . . . . . . . . . . . . . . . 7 Maximum frequency resistor. . . . . . . . . . . . . . . 7 Error amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Shut-down. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal characteristics. . . . . . . . . . . . . . . . . . 10 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 11 Application information. . . . . . . . . . . . . . . . . . 14 Test information . . . . . . . . . . . . . . . . . . . . . . . . 16 Quality information . . . . . . . . . . . . . . . . . . . . . 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 March 2007 Document identifier: TEA1610T_P_3

▲Up To Search▲

Price & Availability of TEA1610T

	To Download TEA1610T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .